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Model Number :SIR422DP-T1-GE3
Place of Origin :original
Brand Name :original
Price :CN¥1.44/pieces
Description :MOSFETs, -
Operating Temperature :-55°C ~ 150°C, -55°C ~ 150°C(TJ)
Series :SIR
Type :MOSFET , Transistors
D/C :23+, 23+
Package Type :Surface Mount
Application :General Purpose, All kinds of Electronic Products
Supplier Type :Other
Cross Reference :-
Media Available :Photo
Current - Collector (Ic) (Max) :-
Voltage - Collector Emitter Breakdown (max) :-
Vce Saturation (Max) @ Ib, Ic :-
Current - Collector Cutoff (Max) :-
DC Current Gain (hFE) (Min) @ Ic, Vce :-
Power - Max :5W(Ta),34.7W(Tc)
Frequency - Transition :-
Mounting Type :Surface Mount, Surface mount
Package / Case :QFN8
Resistor - Base (R1) :-
Resistor - Emitter Base (R2) :-
FET Type :N-channel
FET Feature :-
Drain to Source Voltage (Vdss) :-
Current - Continuous Drain (Id) @ 25°C :20.5 A
Rds On (Max) @ Id, Vgs :6.6 m @ 20A, 10V
Vgs(th) (Max) @ Id :2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs :48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :1785 pF @ 20 V
Frequency :-
Current Rating (Amps) :-
Noise Figure :-
Power - Output :-
Voltage - Rated :-
Drive Voltage (Max Rds On, Min Rds On) :-
Vgs (Max) :±20V
IGBT Type :FET,MOSFET
Configuration :Single Phase
Vce(on) (Max) @ Vge, Ic :-
Input Capacitance (Cies) @ Vce :1785 pF @ 20 V
Input :-
NTC Thermistor :-
Voltage - Breakdown (V(BR)GSS) :40 V
Current - Drain (Idss) @ Vds (Vgs=0) :-
Current Drain (Id) - Max :-
Voltage - Cutoff (VGS off) @ Id :-
Resistance - RDS(On) :-
Voltage - Output :-
Voltage - Offset (Vt) :-
Current - Gate to Anode Leakage (Igao) :-
Current - Valley (Iv) :-
Current - Peak :-
Transistor Type :MOSFET
Product Name :SIR422DP-T1-GE3
Original fromm :Original Brand
Detalis :Please contact us
Shipping by :DHL\UPS\Fedex\EMS\HK Post
Payment :Paypal Western Union t/t
Condition :Brand Newand Original
Warranty :365 Days Warranty
Quality :Original High-quality
Voltage :-
Applications :standard
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