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Model Number :FGH60N60UFD
Place of Origin :Original
Brand Name :Original
Price :CN¥1.44/pieces
Description :IGBT FIELD STOP 600V 120A TO247
Operating Temperature :-55°C ~ 150°C
Series :FGH60
Type :IGBT Transistor
D/C :23+
Package Type :Throught Hole
Application :General Purpose, All kinds of Electronic Products
Supplier Type :Other
Cross Reference :FGH60N60UFD
Media Available :Other
Current - Collector (Ic) (Max) :120 A
Voltage - Collector Emitter Breakdown (max) :600 V
Vce Saturation (Max) @ Ib, Ic :2.4V @ 15V, 60A
Current - Collector Cutoff (Max) :-
DC Current Gain (hFE) (Min) @ Ic, Vce :-
Power - Max :298 W
Frequency - Transition :/
Mounting Type :Through Hole, through-hole
Package / Case :TO-247
Resistor - Base (R1) :-
Resistor - Emitter Base (R2) :-
FET Type :-
FET Feature :-
Drain to Source Voltage (Vdss) :-
Current - Continuous Drain (Id) @ 25°C :-
Rds On (Max) @ Id, Vgs :-
Vgs(th) (Max) @ Id :-
Gate Charge (Qg) (Max) @ Vgs :-
Input Capacitance (Ciss) (Max) @ Vds :-
Frequency :-
Current Rating (Amps) :-
Noise Figure :-
Power - Output :-
Voltage - Rated :--
Drive Voltage (Max Rds On, Min Rds On) :-
Vgs (Max) :-
IGBT Type :-
Configuration :-
Vce(on) (Max) @ Vge, Ic :-
Input Capacitance (Cies) @ Vce :-
Input :-
NTC Thermistor :-
Voltage - Breakdown (V(BR)GSS) :-
Current - Drain (Idss) @ Vds (Vgs=0) :--
Current Drain (Id) - Max :-
Voltage - Cutoff (VGS off) @ Id :-
Resistance - RDS(On) :-
Voltage - Output :-
Voltage - Offset (Vt) :-
Current - Gate to Anode Leakage (Igao) :-
Current - Valley (Iv) :-
Current - Peak :-
Transistor Type :-
Stocking time :3-5day
delivery address :shenzhen
LEAD TIME :1-3 Working Days
Service :One Stop Bom Service
Datasheet :Please contact us!
Inverter :Please contact us!
Warranty :1-3 Years
Shipping by :DHL\UPS\Fedex\EMS\HK Post
Detalis :Please contact us
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